vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 1 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 15 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? designed and qua lified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description 300 v series are the state of the art hyperfast recovery rectifiers designed with opti mized performance of forward voltage drop and hyperfast recovery time. the planar structure and the pl atinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switchin g element and snubbers. product summary package to-220ac i f(av) 15 a v r 300 v v f at i f 1.25 v t rr typ. see recovery table t j max. 175 c diode variation single die anode 1 3 2 cathode base cathode to-220ac absolute maximum ratings parameter symbol test conditions values units repetitive peak reverse voltage v rrm 300 v average rectified forward current i f(av) t c = 142 c 15 a non-repetitive peak surge current i fsm t j = 25 c 140 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 300 - - v forward voltage v f i f = 15 a - 1.05 1.25 i f = 15 a, t j = 125 c - 0.85 1.00 reverse leakage current i r v r = v r rated - 0.05 40 a t j = 125 c, v r = v r rated - 12 400 junction capacitance c t v r = 300 v - 45 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 2 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 40 ns t j = 25 c i f = 15 a di f /dt = - 200 a/s v r = 200 v -32- t j = 125 c - 45 - peak recovery current i rrm t j = 25 c - 2.4 - a t j = 125 c - 6.1 - reverse recovery charge q rr t j = 25 c - 38 - nc t j = 125 c - 137 - thermal - mechanical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc - 1.02 2.0 c/w thermal resistance, junction to ambient r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.2- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ac 15eth03
vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 3 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 100 10 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 175 c t j = 125 c t j = 25 c 0 50 100 150 200 250 300 i r - reverse current (a) v r - reverse voltage (v) 0.001 0.01 0.1 1 10 100 1000 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c 1000 100 10 0 50 100 150 200 250 300 c t - junction capacitance (pf) v r - reverse voltage (v) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 single pulse (thermal resistance) notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 4 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd +pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 120 130 140 150 160 170 180 dc see note (1) square wave (d = 0.50) rated v r applied 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 2 4 6 8 10 12 14 16 18 20 22 rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 100 10 100 1000 t rr (ns) di f /dt (a/s) i f = 15 a, t j = 25 c i f = 15 a, t j = 125 c 100 1000 10 100 1000 q rr (nc) di f /dt (a/s) i f = 15 a, t j = 25 c i f = 15 a, t j = 125 c
vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 5 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-15eth03pbf, VS-15ETH03-N3 www.vishay.com vishay semiconductors revision: 05-apr-12 6 document number: 94000 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-15eth03pbf 50 1000 antistatic plastic tube VS-15ETH03-N3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 2 - current rating (15 = 15 a) 3 - e = single diode 4 - package: 4 t = to-220 5 - h = hyperfast recovery 6 - voltage rating (03 = 300 v) 1 - vishay semiconductors product 7 device code 5 1 3 2 4 6 7 vs- 15 e t h 03 pbf pbf = lead (pb)-free and rohs compliant - environmental digit: -n3 = halogen-free, rohs compliant and totally lead (pb)-free
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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